Neubiberg, Germany - May 14, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced the new TO-Leadless package offering reduced package resistance, significantly smaller size as well as improved EMI behavior. It contains the latest OptiMOS™ MOSFET generation for applications with high power and reliability requirements such as forklift, light electric vehicles, eFuse, PoL (Point of Load) and telecom systems.

The new TO-Leadless package has been designed for high currents up to 300A. Due to its low package resistance it enables the lowest R DS(on) in all voltage classes. The 60 percent smaller package size compared to D 2PAK 7pin enables a very compact design. TO-Leadless shows a substantial reduction in footprint of 30 percent and requires less board space for example in forklift applications. The 50 percent reduced height offers a significant advantage in compact applications such as rack or blade servers. Moreover low package parasitic inductances result in an improved EMI behavior.

"With TO-Leadless Infineon is the first semiconductor company introducing a 0.75m

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