Member access

4-Traders Homepage  >  Shares  >  Nasdaq  >  Maxim Integrated Products Inc.    MXIM   US57772K1016

SummaryQuotesChartsNewsAnalysisCalendarCompanyFinancialsConsensusRevisions 
News SummaryMost relevantAll newsSector news 
The feature you requested does not exist. However, we suggest the following feature:

Maxim Integrated Products : Patent Issued for Low-Leakage ESD Protection Circuit

05/20/2015 | 04:17pm US/Eastern

By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventor Tanase, Gabriel E. (Cupertino, CA), filed on December 28, 2012, was published online on May 12, 2015, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 9030790 is assigned to Maxim Integrated Products Inc. (San Jose, CA).

The following quote was obtained by the news editors from the background information supplied by the inventors: "Electrostatic discharge (ESD) events may occur as a result of a discharge of static electricity or electrostatic induction, typically from human or machine contact. Electronic devices and circuits can be harmed by the sudden current and voltage spikes caused by ESD, and ESD protection circuits have been developed to protect circuits against this potential damage.

"Many standard ESD protection circuits use reverse-biased diodes connected in series. For example, two diodes may have common terminals connected to the input to a circuit and their other terminals connected to the supply rails. In normal operation the diodes are reverse-biased and act as an open circuit. When an ESD strike occurs with a high voltage at the input, one diode becomes forward biased and the ESD current can be directed to a connected core-clamp that limits the voltage of the strike and directs the current to ground, thus protecting the connected circuitry from the strike.

"However, the non-ideal diodes contribute leakage current in the reverse-biased configuration. This leakage current can become large in many implementations and is undesirable, especially for devices using signals having a limited current range and/or having a limited supply of power. Minimizing such leakage current can become a major concern in the design of ESD protection circuits. The leakage current at the input can be the difference between the leakage currents of the two diodes, and these diodes may exhibit different leakage currents despite being of the same type, especially at higher temperatures. Furthermore, the leakage current may be proportional to the voltages across the diodes, such that leakage current can be a function of the input common-mode voltage. In addition, noise current may be of even more concern in some applications and is determined by the leakage current flowing through the diodes. Such current noise is additive, such that each diode contributes additional noise current to the input signal even in protection circuits that have biased the diode voltages to follow the input voltage.

"These and other limitations of the prior art will become apparent to those of skill in the art upon a reading of the following descriptions and a study of the several figures of the drawing."

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventor's summary information for this patent: "An electrostatic discharge (ESD) protection circuit, set forth by way of example and not limitation, includes an input operative to receive input signals and a primary protection circuit coupled to the input. The protection circuit is operative to provide a single ESD current path for one or more the input signals that are ESD strikes. The currents of positive ESD strikes and negative ESD strikes Bow through the single ESD current path, where the single ESD current path is not used by one or more of the input signals that are non-ESD signals.

"In various implementations, the primary protection circuit can include at least one transistor on the single ESD current path, such as a MOSFET transistor, for example. The at least one transistor can be used as a body diode if the ESD strike is a positive strike and turned on as a conducting transistor if the ESD strike is a negative strike. The gate of the at least one transistor can be capacitively coupled to the input. In some implementations, the gate of the transistor can be biased above a voltage at a source or a drain of the transistor by a voltage about double the semiconductor Fermi voltage level of the transistor to reduce the leakage current of the transistor. Multiple transistors can be included in the single ESD current path of the primary protection circuit, where the transistors can act as diodes for the ESD strikes having one or more positive voltages and can be turned on as a conducting transistor for the ESD strikes having one or more negative voltages. The primary protection circuit can be coupled to an upper supply rail and the circuit can include a core-clamp coupled to the upper supply rail and operative to limit the voltage of the ESD strikes that have one or more positive voltages. The primary protection circuit can produce a leakage current at the input, and can use at least one bootstrapping amplifier to provide a reduced voltage across the transistor and to reduce input current dependency of the leakage current on an input voltage at the input.

"In various implementations, a secondary protection circuit can be coupled to the primary protection circuit, coupled to the input, and coupled to a lower supply rail to provide a second ESD current path for the input ESD strikes having one or more negative voltages. A leakage current of the secondary protection circuit can be less than a leakage current of the primary protection circuit. The secondary protection circuit can be coupled to the primary protection circuit by a resistor and can include at least one diode on the second ESD current path.

"An electrostatic discharge (ESD) protection circuit, set forth by way of example and not limitation, includes an input operative to receive input signals and a transistor coupled to the input. The transistor is operative to provide an ESD current path for the received input signals that are ESD strikes, where a gate of the transistor is biased above a voltage at a source or a drain of the transistor by a voltage about double the semiconductor Fermi voltage level of the transistor.

"In various implementations, a second transistor can be included in the ESD current path and coupled between the first transistor and an upper supply rail. The gates of the first and second transistors can be capacitively coupled to the input. A core-clamp can be coupled to the upper supply rail. The first and second transistors and the core-clamp can be included in the ESD current path. Currents of the ESD strikes can flow through the ESD current path for the ESD strikes that have one or more positive voltages and for the ESD strikes that have one or more negative voltages, where the single ESD current path is not used by the input signals that are non-ESD signals. In some implementations, a secondary protection circuit can he coupled to the primary protection circuit, coupled to the input, and coupled to a lower supply rail. The secondary protection circuit can include at least a zener diode and is operative to provide a second ESD current path for the ESD strikes that have one or more negative voltages. A leakage current of the secondary protection circuit can be less than leakage current of the primary protection circuit. Some implementations can include a first amplifier connected between the input and a source of the transistor to provide a voltage to the source about equal to an input voltage of the input. A second amplifier can be connected between the input and a gate of the transistor to provide a voltage to the gate above the input voltage by an amount about double the semiconductor Fermi voltage level of the transistor.

"An electrostatic discharge (ESD) protection circuit, set forth by way of example and not limitation, includes an input operative to receive input signals, a core-clamp connected to an upper supply rail, and a primary protection circuit coupled to the input. The primary protection circuit is operative to provide a first ESD current path for one or more of the input signals that are ESD strikes, where the first ESD current path includes a first transistor capacitively coupled to the input, a second transistor capacitively coupled to the input and connected between the first transistor and the upper supply rail, and the core-clamp. The currents of the ESD strikes flow through the first ESD current path for the ESD strikes that have one or more positive voltages and for the ESD strikes that have one or more negative voltages, where first ESD current path is not used by one or more of the input signals that are non-ESD signals. A secondary protection circuit is coupled to the primary protection circuit, coupled to the input, and coupled to a lower supply rail, and provides a second ESD current path for the input ESD strikes having one or more negative voltages. In some implementations, the first transistor can be a P-channel MOSFET including a source that is bootstrapped to a voltage about equal to a voltage of the input, and a gate that is bootstrapped to a voltage that is above the voltage of the input by an amount about double the semiconductor Fermi voltage level of the first transistor.

"These and other combinations and advantages and other features disclosed herein will become apparent to those of skill in the art upon a reading of the following descriptions and a study of the several figures of the drawing."

URL and more information on this patent, see: Tanase, Gabriel E.. Low-Leakage ESD Protection Circuit. U.S. Patent Number 9030790, filed December 28, 2012, and published online on May 12, 2015. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9030790.PN.&OS=PN/9030790RS=PN/9030790

Keywords for this news article include: Electronics, Semiconductor, Maxim Integrated Products Inc..

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2015, NewsRx LLC

(c) 2015 NewsRx LLC, source Technology Newsletters

React to this article
Latest news on MAXIM INTEGRATED PRODUCTS
05/20 MAXIM INTEGRATED PRODUCTS : Patent Issued for Low-Leakage ESD Protection Circuit
05/19 MAXIM INTEGRATED PRODUCTS : Accelerate Wearables Development with Industry's Fir..
05/19 MAXIM INTEGRATED PRODUCTS INC. : ex-dividend day
05/15 MAXIM INTEGRATED PRODUCTS : Researchers Submit Patent Application, "Systems and ..
05/11 MAXIM INTEGRATED PRODUCTS : Change in Directors or Principal Officers (form 8-K)
05/11 MAXIM INTEGRATED PRODUCTS : Technical Analysis on Semiconductors Equities -- Mar..
05/11 MAXIM INTEGRATED PRODUCTS : High-Side Switch Boosts Throughput and Channel Densi..
05/07 MAXIM INTEGRATED PRODUCTS : "Wafer Level Lens in Package" in Patent Application ..
05/06 MAXIM INTEGRATED PRODUCTS : Patent Issued for Low Side NMOS Protection Circuit f..
04/29 MAXIM INTEGRATED PRODUCTS : Patent Issued for System and Method for Sequentially..
Advertisement
Chart
Duration : Period :
Maxim Integrated Products  Technical Analysis Chart | MXIM | US57772K1016 | 4-Traders
Income Statement Evolution
More Financials