By Targeted News Service
ALEXANDRIA, Va., March 26 -- International Business Machines, Armonk, New York, STMicroelectronics, Coppell, Texas, and GlobalFoundries, Grand Cayman, Cayman Islands, have been assigned a patent (8,987,827) developed by four co-inventors for the "prevention of faceting in epitaxial source drain transistors." The co-inventors are Pietro Montanini, Albany, New York, Raymond Joy, Mechanicville, New York, Marta Mottura, Albany, New York, and Henry K. Utomo, Newburgh, New York.
The patent application was filed on May 31, 2013 (13/907,690). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,987,827.PN.&OS=PN/8,987,827&RS=PN/8,987,827
Written by Deviprasad Jena; edited by Jaya Anand.
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