By Targeted News Service
ALEXANDRIA, Va., Oct. 20 -- International Business Machines, Armonk, New York, and STMicroelectronics, Coppell, Texas, have been assigned a patent (8,860,123) developed by eight co-inventors for a "memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods." The co-inventors are Prasanna Khare, Schenectady, New York, Stephane Allegret-Maret, Grenoble, France, Nicolas Loubet, Guilderland, New York, Qing Liu, Guilderland, New York, Hemanth Jagannathan, Guilderland, New York, Lisa Edge, Watervliet, New York, Kangguo Cheng, Schenectady, New York, and Bruce Doris, Slingerlands, New York.
The patent application was filed on March 28, 2013 (13/852,720). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,860,123.PN.&OS=PN/8,860,123&RS=PN/8,860,123
Written by Sudarshan Harpal; edited by Jaya Anand.
(c) 2014 Targeted News Service