Researchers from STMicroelectronics Report Findings in Analytical Science (Correction of absorption-edge artifacts in polychromatic X-ray tomography in a scanning electron microscope for 3D microelectronics)
By a News Reporter-Staff News Editor at Electronics Newsweekly -- Data detailed on Science have been presented. According to news reporting out of Crolles, France, by VerticalNews editors, research stated, "X-ray tomography is widely used in materials science. However, X-ray scanners are often based on polychromatic radiation that creates artifacts such as dark streaks."
Our news journalists obtained a quote from the research from STMicroelectronics, "We show this artifact is not always due to beam hardening. It may appear when scanning samples with high-Z elements inside a low-Z matrix because of the high-Z element absorption edge: X-rays whose energy is above this edge are strongly absorbed, violating the exponential decay assumption for reconstruction algorithms and generating dark streaks."
According to the news editors, the research concluded: "A method is proposed to limit the absorption edge effect and is applied on a microelectronic case to suppress dark streaks between interconnections."
For more information on this research see: Correction of absorption-edge artifacts in polychromatic X-ray tomography in a scanning electron microscope for 3D microelectronics. Review of Scientific Instruments, 2015;86(1):193-196. Review of Scientific Instruments can be contacted at: Amer Inst Physics, 1305 Walt Whitman Rd, Ste 300, Melville, NY 11747-4501, USA. (American Institute of Physics - www.aip.org/; Review of Scientific Instruments - rsi.aip.org/)
Our news journalists report that additional information may be obtained by contacting D. Laloum, STMicroelectronics, F-38926 Crolles, France. Additional authors for this research include T. Printemps, F. Lorut and P. Bleuet.
Keywords for this news article include: France, Europe, Crolles, Science, Microelectronics
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