Member access

4-Traders Homepage  >  Shares  >  Euronext Paris  >  STMICROELECTRONICS    STM   NL0000226223

STMICROELECTRONICS (STM)

1845
SummaryQuotesChartsNewsAnalysisCalendarCompanyFinancialsConsensusRevisions 
News SummaryMost relevantAll newsSector news 
The feature you requested does not exist. However, we suggest the following feature:

STMICROELECTRONICS : Researchers from STMicroelectronics Report Findings in Analytical Science (Correction of absorption-edge artifacts in polychromatic X-ray tomography...

03/04/2015 | 01:49pm US/Eastern

Researchers from STMicroelectronics Report Findings in Analytical Science (Correction of absorption-edge artifacts in polychromatic X-ray tomography in a scanning electron microscope for 3D microelectronics)

By a News Reporter-Staff News Editor at Electronics Newsweekly -- Data detailed on Science have been presented. According to news reporting out of Crolles, France, by VerticalNews editors, research stated, "X-ray tomography is widely used in materials science. However, X-ray scanners are often based on polychromatic radiation that creates artifacts such as dark streaks."

Our news journalists obtained a quote from the research from STMicroelectronics, "We show this artifact is not always due to beam hardening. It may appear when scanning samples with high-Z elements inside a low-Z matrix because of the high-Z element absorption edge: X-rays whose energy is above this edge are strongly absorbed, violating the exponential decay assumption for reconstruction algorithms and generating dark streaks."

According to the news editors, the research concluded: "A method is proposed to limit the absorption edge effect and is applied on a microelectronic case to suppress dark streaks between interconnections."

For more information on this research see: Correction of absorption-edge artifacts in polychromatic X-ray tomography in a scanning electron microscope for 3D microelectronics. Review of Scientific Instruments, 2015;86(1):193-196. Review of Scientific Instruments can be contacted at: Amer Inst Physics, 1305 Walt Whitman Rd, Ste 300, Melville, NY 11747-4501, USA. (American Institute of Physics - www.aip.org/; Review of Scientific Instruments - rsi.aip.org/)

Our news journalists report that additional information may be obtained by contacting D. Laloum, STMicroelectronics, F-38926 Crolles, France. Additional authors for this research include T. Printemps, F. Lorut and P. Bleuet.

Keywords for this news article include: France, Europe, Crolles, Science, Microelectronics

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2015, NewsRx LLC

(c) 2015 NewsRx LLC

React to this article
Latest news on STMICROELECTRONICS
01:49p STMICROELECTRONICS : Researchers from STMicroelectronics Report Findings in Anal..
01:18p STMICROELECTRONICS : New Chemical Sensors and Actuators Study Results from STMic..
10:34a STMICROELECTRONICS : Introduces World's First Customizable Wireless Battery Char..
10:34a INTEL : Micro-mirrors from STMicroelectronics Provide Precision in Perceptual Co..
03/03 STMICROELECTRONICS : Announces Filing of its 2014 Annual Report Form 20-F
03/03 STMICROELECTRONICS : Announces Filing of its 2014 Annual Report Form 20-F (Engli..
03/03 STMICROELECTRONICS : Announces Filing of its 2014 Annual Report Form 20-F (Frenc..
03/03 STMICROELECTRONICS : Announces Filing of its 2014 Annual Report Form 20-F (Itali..
03/03 STMICROELECTRONICS : eCosCentric adds STM32 F7 support to eCosPro
03/03 STMICROELECTRONICS : Enables Mood-Setting Interactions with Prizm Smart Audio De..
Advertisement
Chart
Duration : Period :
STMICROELECTRONICS Technical Analysis Chart | STM | NL0000226223 | 4-Traders
Income Statement Evolution
More Financials
Dynamic quotes  
ON
| OFF