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4-Traders Homepage  >  Equities  >  TAIWAN STOCK EXCHANGE  >  Taiwan Semiconductor Mfg. Co. Ltd.    2330   TW0002330008

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Taiwan Semiconductor Mfg : Patent Issued for Memory Device with Self-Boosted Mechanism (USPTO 9659620)

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06/01/2017 | 10:16pm CEST

By a News Reporter-Staff News Editor at Electronics Newsweekly -- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (Hsinchu, TW) has been issued patent number 9659620, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

The patent's inventors are Chen, Yen-Huei (Jhudong Township, TW); Liao, Hung-Jen (Hsin-Chu, TW); Lin, Chih-Yu (Taichung, TW); Chang, Jonathan Tsung-Yung (Hsinchu, TW); Wu, Wei-Cheng (Hsinchu, TW).

This patent was filed on March 26, 2015 and was published online on May 23, 2017.

From the background information supplied by the inventors, news correspondents obtained the following quote: "Recently, memory devices have been widely applied in various kinds of electronic products, such as computer, mobile phones, tablets, and so on. In order to provide more data capacity, a boosted word line circuit was developed. With the boosted word line circuit, a driving ability of the memory device is improved, and thus both of the data capacity and performance of the memory device can be increased."

Supplementing the background information on this patent, VerticalNews reporters also obtained the inventors' summary information for this patent: "According to an aspect of some embodiments, an electronic device may include memory cells, a word line, a selection unit, and a self-boosted driver. The memory cells are configured to store data. The word line is coupled to the memory cells. The selection unit is disposed at a first terminal of the word line and is configured to transmit a selection signal to activate the word line according to one of a read command and a write command. The self-boosted driver is disposed at a second terminal of the word line and is configured to pull up a voltage level of the word line according to the voltage level of the word line and a control signal.

"The object and advantages of the embodiments will be realized and achieved at least by the elements, features, and combinations particularly pointed out in the claims.

"It is to be understood that both the foregoing general description and the following detailed description are merely examples and explanatory and are not restrictive of the invention, as claimed."

For the URL and additional information on this patent, see: Chen, Yen-Huei; Liao, Hung-Jen; Lin, Chih-Yu; Chang, Jonathan Tsung-Yung; Wu, Wei-Cheng. Memory Device with Self-Boosted Mechanism. U.S. Patent Number 9659620, filed March 26, 2015, and published online on May 23, 2017. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9659620.PN.&OS=PN/9659620RS=PN/9659620

Keywords for this news article include: Electronics, TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2017, NewsRx LLC

(c) 2017 NewsRx LLC, source Technology Newsletters

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