SGT MOSFET Development Status

GLOBAL LOCATIONS

Taipei

Automotive & Industrial Focus!

  • Founded in 1979 in Taipei, Taiwan
  • 18 Sales Channels Worldwide
  • 4 Production Sites

Headquarter

Sales office

Front-end

Back-end

TSC AUTOMOTIVE MOSFET

RDS (ON), 導通阻抗

25% RDS (ON)

2.0

33% FOM

Improved

13% RDS (ON)

14% FOM

TQM025NB04CR

Improved

15% RDS (ON)

1.5

2.0mΩ (typ.)

15% FOM

FOM=236

Improved

AL Ribbon

Wafer: 6mil

SGT40

1.0

Ω

1.5m (typ.)

SGT40

AL Ribbon

1.3mΩ (typ.)

Wafer: 6mil

AL Wire

I-Company

PerFET

Wafer: 4mil

0.5

Ω

(max.)

1.1m

< 1 mΩ (max.)

FOM=116

FOM=115

Standard Trench

Split-Gate Trench (SGT)

Cu Clip

Wafer: 3mil

Cu Clip

(mΩ)

標準溝槽式架構

新技術平台

閘極分離式溝槽

Wafer: 4mil

ID

(A)

25

50

75

100

FOM (Figure-of-Merit): MOSFET 產品性能指數

TSC AUTOMOTIVE MOSFET PROJECT TIMELINE

ADVANTAGES

In-house Design

(Dual) Front-end collaboration

Product Specification Enhancement

Quality + Value + Competitiveness

263

13

+

+

44

44

TSC AUTOMOTIVE MOSFET PROJECT TIMELINE

Attachments

  • Original Link
  • Original Document
  • Permalink

Disclaimer

Taiwan Semiconductor Co. Ltd. published this content on 01 March 2023 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 01 March 2023 09:01:20 UTC.