By a News Reporter-Staff News Editor at Investment Weekly News -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventors He, Wanxun (Singapore, SG); Xing, Su (Singapore, SG), filed on January 23, 2017, was published online on February 6, 2018.
The assignee for this patent, patent number 9887238, is United Microelectronics Corp. (Hsin-Chu, TW).
Reporters obtained the following quote from the background information supplied by the inventors: "The invention relates to a semiconductor device and a method for fabricating the semiconductor device, and more particularly to an oxide-semiconductor (OS) transistor and fabrication method thereof.
"Attention has been focused on a technique for formation of a transistor using a semiconductor thin film formed over a substrate having an insulating surface. The transistor is used in a wide range of electronic devices such as an integrated circuit (IC) and an image display device (display device). A silicon-based semiconductor material is widely known as a material for a semiconductor thin film applicable to a transistor, and within which, oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn) has been attracting attention.
"A transistor including an oxide semiconductor film is known to have an extremely low leakage current in an off state. Nevertheless, current architecture of a so-called oxide-semiconductor transistor is still insufficient in providing multiple Vt options and allowing flexible device I.sub.on/T.sub.off. Hence, how to improve the fabrication as well as structure of current oxide-semiconductor device has become an important task in this field."
In addition to obtaining background information on this patent, VerticalNews editors also obtained the inventors' summary information for this patent: "According to an embodiment of the present invention, a method for fabricating a semiconductor device includes the steps of: forming a channel layer on a substrate; forming a gate dielectric layer on the channel layer; forming a source layer and a drain layer adjacent two sides of the gate dielectric layer; forming a bottom gate on the gate dielectric layer; forming a phase change layer on the bottom gate; and forming a top gate on the phase change layer.
"According to another aspect of the present invention, a semiconductor device includes: a channel layer on a substrate; a bottom gate on the channel layer; a source layer and a drain layer adjacent to two sides of the bottom gate; a phase change layer on the bottom gate; and a top gate on the phase change layer.
"These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings."
For more information, see this patent: He, Wanxun; Xing, Su. Semiconductor Device and Method for Fabricating the Same. U.S. Patent Number 9887238, filed January 23, 2017, and published online on February 6, 2018. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9887238.PN.&OS=PN/9887238RS=PN/9887238
Keywords for this news article include: Asia, Taiwan, Business, Semiconductor, United Microelectronics Corp.
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