Expanded bandwidth of FRL1441U Series - pump lasers for high output, low power consumption Raman amplifiers - for U-band application
- Also succeeded in further increasing output power of the entire Series by optimizing laser chip design -
- Expansion of bandwidth of FRL1441U Series - pump lasers for high output, low power consumption Raman amplifiers - enabled U-band application, contributing to expanding transmission wavelength range
- Mass production of pump lasers for all S-, C-, L- and U-bands will start from this April
- The pump laser for the C-band achieved fiber output of 1W at 35°C, contributing to achieving lower power consumption as a result of reducing reactive power
Background
While communication traffic volume at data centers or elsewhere has been increasing on the background of the popularization of cloud service and the emergence of generative AI, along with increasing data transmission speed, the transmission distance decreases due to degradation of the OSNR (note 1) on the signal receiving side. In particular, when existing communication systems are used at faster transmission speeds, the role of the Raman amplifier, which can amplify optical output power without attenuation of the signal light quality, will become more important. Also, because the bandwidth of the signal expands as a result of high-speed transmission, it is necessary to extend the bandwidth in order to enable high volume transmission. Thus, Raman amplifiers need to have high flexibility to amplify the light source at a discretionary range based on the selection of the pump laser wavelength. On the other hand, with the expansion into the U-band, the number of pump lasers used increases, so it is even more important for them to have high output power and low power consumption. In
Details
This time, to support further expansion of bandwidth, based on the specification for the L-band, specifically 500mW output and maximum power consumption of 10W, we added a pump laser for Raman amplifiers for the U-band (wavelength range: 1520-1545nm), where achieving a higher output power was challenging, to the lineup of FRL1441U Series. Product sample shipment starts from January of this year, and mass production is scheduled to begin in April (See Table below).
Furthermore, while fiber output from the existing product for C-band is 800mW when the driving current is 4A at 35°C, this product achieved 1W as a result of optimizing the laser chip design (Fig. 1). Similarly to the existing products, this product was developed in the 14-pin butterfly package (Fig. 2), thereby reducing reactive power and contributing to further lowering power consumption. In order to offer more technical advantages to FRL1441U Series, we reduced electrical resistance of laser chip by more than 10% by optimizing the design of the chip, and developed the laser chip which enables high output power with low power consumption. On this background, it uses our optical semiconductor processing technology using InP (note 2) semiconductor materials developed over more than 25 years and high accuracy fiber coupling technology, as well as the application of our unique low loss, high efficiency semiconductor laser chip structure. It also takes advantage of the optimized design of our patented high efficiency semiconductor laser chip structure.
An oral presentation of this product will be made at Photonics West 2024 to be held in
Photonics West 2024
The current development was conducted and achieved as part of the
Going forward, we will continue to develop high output, low power consumption laser chip technology and contribute to accelerated reductions in module power consumption and the establishment of environmentally-friendly networks. Table: Main characteristics of FRL1441U Series Model FRL1441U Series Bandwidth S-band L-band U-band Optical output power (mW) 700 600 500 Power consumption (W) Max. 14 Max. 10 Max. 10 Operating conditions Ts=35°C, Tc=70°C(EOL)
(note 1)OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio
(note 2)InP (Indium Phosphide): A III-V compound semiconductor that is used for the manufacture of laser diode chips and high speed transistors
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