Raytheon, an RTX business, has been awarded a four-year, $15 million contract from DARPA to increase the electronic capability of radio frequency sensors with high-power-density Gallium Nitride transistors. The improved transistors will have 16 times higher output power than traditional Gallium Nitride with no increase in operating temperature. This new prototyping work is being performed under DARPA's Technologies for Heat Removal in Electronics at the Device Scale program, known as THREADS.