centrotherm international AG has the future in its sights with its new system generation for 200 mm silicon carbide wafer processing. Demand for high-performance electronics such as transistors and diodes is rising rapidly in tandem with advancing digitalization, e-mobility and renewable energy generation. The conversion of high electrical power usually also requires components offering greater dielectric strength. For such applications, silicon carbide (SiC) semiconductor devices offer better efficiency, higher temperature stability and reliability in harsh environments.