Intermolecular, Inc. announced a new defined ALD process of Tellurium, allowing for more efficient composition tuning for 3D crosspoint NVM selectors. A paper on the use of ALD of elemental tellurium prepared by Intermolecular's CTO organization will be presented at the ALD Conference on Tuesday, July 31, 2018 at the Songdo Convensia in Incheon, South Korea. NVM devices use a selector device, such as the ovonic threshold switch (OTS), in series with the memory element to minimize parasitic currents in the memory array. Intermolecular has leveraged its accelerated High-Throughput Experimentation (HTE) platform to rapidly develop a conformal elemental Te ALD process to tune the composition in various OTS pertinent films. Utilizing Intermolecular's innovative platform, a suitable nucleation layer was identified and deployed to realize continuous, conformal coatings of elemental Te on high aspect ratio test structures.