Intermolecular, Inc. announced the industry's first quaternary atomic layer deposition (ALD) GeAsSeTe1OTS device for 3D vertical memory arrays. This breakthrough combination of materials will enable a 3D vertical NVM memory architecture for customers to design chips for high density, high performance computing applications at affordable costs. Ovonic Threshold Switch (OTS) devices are commonly used as selector elements in 3D Crosspoint memory arrays. They were currently only limited to a crosspoint architecture due to the absence of conformality of physical vapor deposition (PVD) deposited chalcogenide films. The revolutionary four-element ALD discovery is the result of Intermolecular's team of materials experts and the company's depth of experience with precursors, chemistry process and deposition capabilities. The GeAsSeTe OTS device for 3D vertical memory arrays deliver excellent endurance at 1 billion cycles, fast switching and low threshold voltage (VTH) drift. The introduction and first demonstration of the As element in a 4 element ALD film allows for excellent thermal stability and for the device to operate at high temperatures. Moreover, ALD chalcogenides-based 3D vertical memories change the cost paradigm by making them less dependent on expensive lithography scaling and making them inherently bit cost scalable. It is expected that the future of phase change memories will be driven by the optimization and subsequent adoption of ALD based chalcogenides in high-volume manufacturing (HVM).